8N60 Datasheet | Specifications & PDF Download

FHF8N60NMOS 。AC-DC ，DC-DC，HPMW。 ★ ★ ★ 8A,600V,RDS(on)(）0.8Ω 、 FHF8N60 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg 600 8 ±30 52

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www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specification 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25

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* '6 72  *' 6 72 ) ' * 6 VDSS ID VGSS PD TJ Tstg EAS Ciss Coss Crss VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0

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N R N-CHANNEL MOSFET JCS8N60CB/FB MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 25 nC Package z z z UPS APPLICATIONS z

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SEMICONDUCTOR 8N60 Series RRooHHSS Nell High Power Products DESCRIPTION N-Channel Power MOSFET (8A, 600Volts) The Nell 8N60 is a three-terminal s

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SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which

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8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE  8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, plan

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STFU18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features 3 12 TO-220FP ult

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8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE  8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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FQP8N60C/FQPF8N60C FQP8N60C/FQPF8N60C 600V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transisto

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MDF8N60 N-channel MOSFET 600V MDF8N60 N-Channel MOSFET 600V, 8A, 1.0Ω General Description The MDF8N60 uses advanced Magnachip’s MOSFET Technology, w

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isc N-Channel MOSFET Transistor IXFP18N60X ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V ·Fully characterized avalanche volt

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 18N60 ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy

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www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 60

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PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, R DS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switc

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STW48N60M2-4 Datasheet N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO247‑4 package Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(

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CEL68N60SF N-Channel Enhancement Mode Field Effect Transistor With Fast Body Diode FEATURES 650V@TJ max, 68A, RDS(ON) = 37mΩ @VGS = 10V Super high

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FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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