8N60 Datasheet | Specifications & PDF Download

* '6 72  *' 6 72 ) ' * 6 VDSS ID VGSS PD TJ Tstg EAS Ciss Coss Crss VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0

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FHF8N60NMOS 。AC-DC ，DC-DC，HPMW。 ★ ★ ★ 8A,600V,RDS(on)(）0.8Ω 、 FHF8N60 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg 600 8 ±30 52

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www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 60

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www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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CEL68N60SF N-Channel Enhancement Mode Field Effect Transistor With Fast Body Diode FEATURES 650V@TJ max, 68A, RDS(ON) = 37mΩ @VGS = 10V Super high

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8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE  8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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N R N-CHANNEL MOSFET JCS8N60CB/FB MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 25 nC Package z z z UPS APPLICATIONS z

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isc N-Channel MOSFET Transistor IXFP18N60X ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V ·Fully characterized avalanche volt

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INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specification 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25

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TM www.DataSheet4U.com HiPerFET PolarHV Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Dio

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Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode High Speed PT IGBT for 40 - 100kHz Switching IXG

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GenX3TM 600V IGBTs Ultra Low Vsat PT IGBTs for up to 5kHz switching IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SS

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GenX3TM 600V IGBT with Diode IXGR48N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBTs for 40-100kHz Switching Symbol VCES VCGR VGES

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Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 48N60P ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Di

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Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFQ28N60P3 IXFH

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GenX3TM 600V IGBT High-Speed PT IGBTs for 40-100kHz Switching IXGI48N60C3* IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 *Obsolete Part Number VCES = IC110 =

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK48N60Q3 IXFX48N60Q3 D G S Symbol VDSS VDGR

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Advance Technical Information GenX3TM 600V IGBT IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 VCES = 600V IC110 = 28A V CE(sat)  1.4V Ultra Low Vsat

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FPS38N60L-VB www.VBsemi.com FPS38N60L-VB Datasheet N-Channel 600V(D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channe

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