8N60 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specification 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25

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FHF8N60NMOS 。AC-DC ，DC-DC，HPMW。 ★ ★ ★ 8A,600V,RDS(on)(）0.8Ω 、 FHF8N60 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg 600 8 ±30 52

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* '6 72  *' 6 72 ) ' * 6 VDSS ID VGSS PD TJ Tstg EAS Ciss Coss Crss VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0

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SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which

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UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, plan

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www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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BRF8N60(CS8N60F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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FQPF8N60C — N-Channel QFET® MOSFET FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω November 2013 Description These N-Channel enhancement mode

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STFU18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features 3 12 TO-220FP ult

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SVF18N60F/T 18A、600V N SVF18N60F/T N MOS F-CellTM VDMOS 。 、 。 AC-DC ，DC-DC ， H PWM 。 ∗ 18A，600V，RDS(on)()=0.36Ω@VGS=10V ∗ ∗ ∗ ∗ dv/dt

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STW48N60M2-4 Datasheet N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO247‑4 package Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(

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Preliminary Technical Information GenX3TM 600V IGBT with Diode Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGH48N60B3D1 VCES = IC110 = VCE(s

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SEMICONDUCTOR 8N60 Series RRooHHSS Nell High Power Products DESCRIPTION N-Channel Power MOSFET (8A, 600Volts) The Nell 8N60 is a three-terminal s

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GenX3TM 600V IGBTs Ultra Low Vsat PT IGBTs for up to 5kHz switching IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SS

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8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE  8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, R DS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switc

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Advance Technical Information GenX3TM 600V IGBT IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 VCES = 600V IC110 = 28A V CE(sat)  1.4V Ultra Low Vsat

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GenX3TM 600V IGBT w/Diode Ultra Low Vsat PT IGBT for up to 5kHz switching IXGH48N60A3D1 VCES = IC110 = VCE(sat) ≤ 600V 48A 1.35V TO-247 AD Symbol

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FPS38N60L-VB www.VBsemi.com FPS38N60L-VB Datasheet N-Channel 600V(D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at

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N R N-CHANNEL MOSFET JCS8N60CB/FB MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 25 nC Package z z z UPS APPLICATIONS z

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