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8N60C Datasheet, Features, Application

8N60C FQB8N60C

www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C.

Fairchild Semiconductor
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8N60C - FQB8N60C

www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow.
JILIN SINO-MICROELECTRONICS
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JCS8N60CB - N-CHANNEL MOSFET

N R N-CHANNEL MOSFET JCS8N60CB/FB MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson(@Vgs=10V) 1.2 Ω Qg 25 nC Package z z z UPS APPLICATIONS z .
Winsemi
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WFF8N60C - Silicon N-Channel MOSFET

WFF8N60C Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 54nC) � Fast Switc.
Maple Semiconductor
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SLF8N60C - N-Channel MOSFET

SLP8N60C / SLF8N60C SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st.
ON Semiconductor
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FQB8N60C - N-Channel MOSFET

FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description This N-Channel enhancement .
Fairchild Semiconductor
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FQP8N60C - 600V N-Channel MOSFET

FQP8N60C — N-Channel QFET® MOSFET FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω April 2014 Description These N-Channel enhancement mode power.
Fairchild Semiconductor
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FQPF8N60C - 600V N-Channel MOSFET

FQPF8N60C — N-Channel QFET® MOSFET FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω November 2013 Description These N-Channel enhancement mode .
Fairchild Semiconductor
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FQB8N60CF - 600V N-Channel MOSFET

FQB8N60CF 600V N-Channel MOSFET FQB8N60CF 600V N-Channel MOSFET Features • 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 28nC).
IXYS Corporation
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IXGH48N60C3D1 - GenX3 600V IGBT

www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 60.
Maple Semiconductor
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SLP8N60C - N-Channel MOSFET

SLP8N60C / SLF8N60C SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st.
Fairchild Semiconductor
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P8N60C - FQP8N60C

FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors .
IXYS Corporation
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IXGH48N60C3 - GenX3 600V IGBT

GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA).
IXYS Corporation
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IXGP48N60C3 - GenX3 600V IGBT

GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA).
ON Semiconductor
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FQI8N60C - N-Channel MOSFET

FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description This N-Channel enhancement .
Fairchild Semiconductor
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FQB8N60C - 600V N-Channel MOSFET

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Fairchild Semiconductor
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FQI8N60C - 600V N-Channel MOSFET

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IXYS
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IXGH48N60C3C1 - GenX3 600V IGBT w/ SiC Anti-Parallel Diode

Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode High Speed PT IGBT for 40 - 100kHz Switching IXG.
IXYS Corporation
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IXGA48N60C3 - GenX3 600V IGBT

GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA).
Fairchild Semiconductor
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FQPF8N60CF - 600V N-Channel MOSFET

FQPF8N60CF — N-Channel QFET® FRFET® MOSFET December 2013 FQPF8N60CF N-Channel QFET® FRFET® MOSFET 600 V, 6.26 A, 1.5 Ω Description Features This .
Fairchild Semiconductor
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PF8N60C - FQPF8N60C

FQP8N60C/FQPF8N60C FQP8N60C/FQPF8N60C 600V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transisto.
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