www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C.
8N60C - FQB8N60C
www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow.JCS8N60CB - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS8N60CB/FB MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson(@Vgs=10V) 1.2 Ω Qg 25 nC Package z z z UPS APPLICATIONS z .WFF8N60C - Silicon N-Channel MOSFET
WFF8N60C Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 54nC) � Fast Switc.SLF8N60C - N-Channel MOSFET
SLP8N60C / SLF8N60C SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st.FQB8N60C - N-Channel MOSFET
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description This N-Channel enhancement .FQP8N60C - 600V N-Channel MOSFET
FQP8N60C — N-Channel QFET® MOSFET FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω April 2014 Description These N-Channel enhancement mode power.FQPF8N60C - 600V N-Channel MOSFET
FQPF8N60C — N-Channel QFET® MOSFET FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω November 2013 Description These N-Channel enhancement mode .FQB8N60CF - 600V N-Channel MOSFET
FQB8N60CF 600V N-Channel MOSFET FQB8N60CF 600V N-Channel MOSFET Features • 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 28nC).IXGH48N60C3D1 - GenX3 600V IGBT
www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 60.SLP8N60C - N-Channel MOSFET
SLP8N60C / SLF8N60C SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st.P8N60C - FQP8N60C
FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors .IXGH48N60C3 - GenX3 600V IGBT
GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA).IXGP48N60C3 - GenX3 600V IGBT
GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA).FQI8N60C - N-Channel MOSFET
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description This N-Channel enhancement .IXGH48N60C3C1 - GenX3 600V IGBT w/ SiC Anti-Parallel Diode
Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode High Speed PT IGBT for 40 - 100kHz Switching IXG.IXGA48N60C3 - GenX3 600V IGBT
GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA).FQPF8N60CF - 600V N-Channel MOSFET
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET December 2013 FQPF8N60CF N-Channel QFET® FRFET® MOSFET 600 V, 6.26 A, 1.5 Ω Description Features This .PF8N60C - FQPF8N60C
FQP8N60C/FQPF8N60C FQP8N60C/FQPF8N60C 600V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transisto.