8N60C Datasheet | Specifications & PDF Download

GenX3TM 600V IGBT High-Speed PT IGBTs for 40-100kHz Switching IXGI48N60C3* IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 *Obsolete Part Number VCES = IC110 =

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www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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GenX3TM 600V IGBT with Diode IXGR48N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBTs for 40-100kHz Switching Symbol VCES VCGR VGES

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FQPF8N60C — N-Channel QFET® MOSFET FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω November 2013 Description These N-Channel enhancement mode

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FQPF8N60CF — N-Channel QFET® FRFET® MOSFET December 2013 FQPF8N60CF N-Channel QFET® FRFET® MOSFET 600 V, 6.26 A, 1.5 Ω Description Features This

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N R N-CHANNEL MOSFET JCS8N60CB/FB MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 25 nC Package z z z UPS APPLICATIONS z

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Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode High Speed PT IGBT for 40 - 100kHz Switching IXG

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FQP8N60C — N-Channel QFET® MOSFET FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω April 2014 Description These N-Channel enhancement mode power

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FQP8N60C/FQPF8N60C FQP8N60C/FQPF8N60C 600V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transisto

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FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description This N-Channel enhancement

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FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect trans

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FQB8N60CF 600V N-Channel MOSFET FQB8N60CF 600V N-Channel MOSFET Features • 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 28nC)

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www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 60

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WFF8N60C Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 54nC) � Fast Switc

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FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect trans

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GenX3TM 600V IGBT High-Speed PT IGBTs for 40-100kHz Switching IXGI48N60C3* IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 *Obsolete Part Number VCES = IC110 =

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GenX3TM 600V IGBT High-Speed PT IGBTs for 40-100kHz Switching IXGI48N60C3* IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 *Obsolete Part Number VCES = IC110 =

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GenX3TM 600V IGBT High-Speed PT IGBTs for 40-100kHz Switching IXGI48N60C3* IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 *Obsolete Part Number VCES = IC110 =

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SLP8N60C / SLF8N60C SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

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SJTD08N60C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.45Ω ID 8A Featu

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