® BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 S.
STMicroelectronics
BUZ11 - N-CHANNEL MOSFET
® BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET™ MOSFET T YPE BUZ 11 s s s s s V DSS 50 V R DS(o n) < 0.04 Ω ID 33 A TYPICAL RDS(on) = 0.0.
Siemens Semiconductor Group
BUZ110S - Power Transistor
BUZ 110 S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in.
STMicroelectronics
BUZ11A - N-Channel MOSFET
® BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET™ MOSFET T YPE BUZ11A s s s s s V DSS 50 V R DS(on) < 0.055 Ω ID 26 A TYPICAL RDS(on) = 0.
Siemens Semiconductor Group
BUZ111S - Power Transistor
BUZ111S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in S.
Siemens Semiconductor Group
BUZ11 - Power Transistor
BUZ 11 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 VDS 50.
Intersil Corporation
BUZ11 - N-Channel Power MOSFET
BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power fie.
Siemens Semiconductor Group
BUZ110SL - Power Transistor
BUZ 110 SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating tempe.
Siemens Semiconductor Group
BUZ111SL - Power Transistor
BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating tempera.
Siemens Semiconductor Group
BUZ11A - Power Transistor
BUZ 11 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 A VD.
Siemens Semiconductor Group
BUZ11AL - Power Transistor
BUZ 11 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 11 AL Pin 2 .
Siemens Semiconductor Group
BUZ11S2 - Power Transistor
BUZ 11 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 S2 .
STMicroelectronics
BUZ11S2FI - N-Channel MOSFET
BUZ11S2 BUZ11S2FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11S2 BUZ11S2FI Voss 60 V 60 V ROS(on) 0.04 {1 0.04 {1 10 - 30 A 20 A .
STMicroelectronics
BUZ11S2 - N-Channel MOSFET
BUZ11S2 BUZ11S2FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11S2 BUZ11S2FI Voss 60 V 60 V ROS(on) 0.04 {1 0.04 {1 10 - 30 A 20 A .
STMicroelectronics
BUZ11FI - N-Channel MOSFET
BUZ11 BUZ11 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11 FI Voss 50 V 50 V RoS(on) 0.040 0.040 10 - 30 A 20 A • HIGH SP.
ON Semiconductor
BUZ11 - N-Channel Power MOSFET
Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power .
Fairchild Semiconductor
BUZ11 - N-Channel Power MOSFET
Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power .
INCHANGE
BUZ11A - N-Channel MOSFET
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Avalanche rugged technology ·High current capab.
INCHANGE
BUZ11S2 - N-Channel MOSFET
isc N-Channel Mosfet Transistor BUZ11S2 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High .
INCHANGE
BUZ11 - N-Channel MOSFET
isc N-Channel Mosfet Transistor BUZ11 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High in.
