EB6 Datasheet | Specifications & PDF Download

CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Supe

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CEP65A3/CEB65A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 45A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. Super high

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CEP6030LS2/CEB6030LS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 52A , RDS(ON)=13.5m Ω @VGS=10V. RD

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CEP655N/CEB655N CEI655N/CEF655N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP655N CEB655N CEI655N CEF655N VDSS 150V 150V 150V 1

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CEP658N/CEB658N CEF658N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP658N CEB658N CEF685N VDSS 180V 180V 180V RDS(ON) 0.22Ω 0.2

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RMS2061EB68EAW-1600 DATA SHEET DDR3 SDRAM 240Pin Registered DIMM Based on Elpida 4Gb B-die 78-ball FBGA With Lead-Free (RoHS compliant) Ramaxel Tec

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CEP6106/CEB6106 N-Channel Enhancement Mode Field Effect Transistor FEATURES 57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super high dense cell design for ext

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CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e

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CEP61A2/CEB61A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 57A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super hi

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Panasonic Industrial Company Aluminum Electrolytic Capacitors TS-HA/HB Series 105°C, 3000 hours Long 3000 hour life at 105°C with high ripple curr

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CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.36Ω

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CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cel

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CEB63A3-VB CEB63A3-VB Datasheet N-Channel 30 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at V

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CEP6086L/CEB6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 72A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @V

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON

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CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4

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