G630 Datasheet | Specifications & PDF Download

DG630 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG630N，， ，，，。 ，，。 DG630 is an N-channel enhancement mode MOSFET, which is pro

(20 views)

Digital FET, Dual N-Channel FDG6303N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin

(16 views)

Global Mixed-mode Technology G630/G631 Microprocessor Reset IC Features „ Precision Monitoring of +3V, +3.3V, and +5V Power-Supply Voltages „ Fully

(15 views)

Dual N-Channel, Digital FET FDG6301N-F085 Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7

(15 views)

Digital FET, Dual P-Channel FDG6304P General Description These dual P−Channel logic level enhancement mode field effect transistors are produced usin

(15 views)

July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro

(14 views)

July 1999 FDG6302P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are pro

(14 views)

July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro

(14 views)

FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged g

(12 views)

(12 views)

July 1999 FDG6304P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are pro

(11 views)

MG6308WZ 650V 75A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 75A 1.5V 512pcs lFeatures

(11 views)

DATA SHEET www.onsemi.com MOSFET– Specified, P-Channel, POWERTRENCH) 2.5 V FDG6306P General Description This P−Channel 2.5 V specified MOSFET is a r

(11 views)

Digital FET, Dual N-Channel FDG6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin

(11 views)

FDG6308P January 2001 FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild

(10 views)

NEW PRODUCT DMG6301UDW 25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 25V RDS(ON) 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +2

(9 views)

MG6307WZ 650V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 25A 1.5V 1328pcs lFeatures

(9 views)

MG6303WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 30A 1.5V 1137pcs lFeatures

(6 views)