Global Mixed-mode Technology G630/G631 Microproc.
ON Semiconductor
FDG6301N-F085 - Dual N-Channel Digital FET
Dual N-Channel, Digital FET FDG6301N-F085 Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7.
Global Mixed-mode Technology
G630 - Microprocessor Reset IC
Global Mixed-mode Technology G630/G631 Microprocessor Reset IC Features Precision Monitoring of +3V, +3.3V, and +5V Power-Supply Voltages Fully.
Fairchild Semiconductor
FDG6301N - Dual N-Channel/ Digital FET
July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro.
Fairchild Semiconductor
FDG6308P - P-Channel MOSFET
FDG6308P January 2001 FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild.DG630 - N-CHANNEL ENHANCEMENT MODE MOSFET
DG630 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG630N，， ，，，。 ，，。 DG630 is an N-channel enhancement mode MOSFET, which is pro.
Fairchild Semiconductor
FDG6302P - Dual P-Channel/ Digital FET
July 1999 FDG6302P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are pro.
Fairchild Semiconductor
FDG6304P - Dual P-Channel/ Digital FET
July 1999 FDG6304P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are pro.
Fairchild Semiconductor
FDG6306P - P-Channel 2.5V Specified PowerTrench MOSFET
FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged g.
ROHM
MG6303WZ - Insulated Gate Bipolar Transistor
MG6303WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 30A 1.5V 1137pcs lFeatures.
ROHM
MG6307WZ - Insulated Gate Bipolar Transistor
MG6307WZ 650V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 25A 1.5V 1328pcs lFeatures.
ROHM
MG6308WZ - Insulated Gate Bipolar Transistor
MG6308WZ 650V 75A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 75A 1.5V 512pcs lFeatures .
ON Semiconductor
FDG6306P - P-Channel MOSFET
DATA SHEET www.onsemi.com MOSFET– Specified, P-Channel, POWERTRENCH) 2.5 V FDG6306P General Description This P−Channel 2.5 V specified MOSFET is a r.
ON Semiconductor
FDG6301N - Dual N-Channel Digital FET
Digital FET, Dual N-Channel FDG6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin.
ON Semiconductor
FDG6303N - Dual N-Channel Digital FET
Digital FET, Dual N-Channel FDG6303N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin.
ON Semiconductor
FDG6304P - Dual P-Channel Digital FET
Digital FET, Dual P-Channel FDG6304P General Description These dual P−Channel logic level enhancement mode field effect transistors are produced usin.
Fairchild Semiconductor
FDG6303N - Dual N-Channel Digital FET
July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro.
Diodes
DMG6301UDW - Dual N-Channel MOSFET
NEW PRODUCT DMG6301UDW 25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 25V RDS(ON) 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +2.
