MG6303WZ (ROHM)
Insulated Gate Bipolar Transistor
MG6303WZ
650V 30A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V 30A 1.5V 1137pcs
lFeatures
(27 views)
MG6308WZ (ROHM)
Insulated Gate Bipolar Transistor
MG6308WZ
650V 75A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V 75A 1.5V 512pcs
lFeatures
(27 views)
MG630 (Matrixopto)
GaAs Hall Element
(27 views)
DMG6301UDW (Diodes)
Dual N-Channel MOSFET
NEW PRODUCT
DMG6301UDW
25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 25V
RDS(ON)
4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V
ID TA = +2
(26 views)
MG6307WZ (ROHM)
Insulated Gate Bipolar Transistor
MG6307WZ
650V 25A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V 25A 1.5V 1328pcs
lFeatures
(26 views)
DG630 (DGME)
N-CHANNEL ENHANCEMENT MODE MOSFET
DG630
N N-CHANNEL ENHANCEMENT MODE MOSFET
：V1.0
General Description
DG630N，， ，，，。 ，，。
DG630 is an N-channel enhancement mode MOSFET, which is pro
(23 views)
FDG6306P (Fairchild Semiconductor)
P-Channel 2.5V Specified PowerTrench MOSFET
FDG6306P
February 2001
FDG6306P
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P -Channel 2.5V specified MOSFET is a rugged g
(22 views)
G630 (Global Mixed-mode Technology)
Microprocessor Reset IC
Global Mixed-mode Technology
G630/G631
Microprocessor Reset IC
Features
Precision Monitoring of +3V, +3.3V, and +5V Power-Supply Voltages
Fully
(20 views)
FDG6303N (ON Semiconductor)
Dual N-Channel Digital FET
Digital FET, Dual N-Channel FDG6303N
General Description These dual N−Channel logic level enhancement mode field effect
transistors are produced usin
(20 views)
FDG6301N (ON Semiconductor)
Dual N-Channel Digital FET
Digital FET, Dual N-Channel FDG6301N
General Description These dual N−Channel logic level enhancement mode field effect
transistors are produced usin
(19 views)
FDG6301N (Fairchild Semiconductor)
Dual N-Channel/ Digital FET
July 1999
FDG6301N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are pro
(17 views)
FDG6302P (Fairchild Semiconductor)
Dual P-Channel/ Digital FET
July 1999
FDG6302P Dual P-Channel, Digital FET
General Description
These dual P-Channel logic level enhancement mode field effect transistors are pro
(17 views)
FDG6304P (Fairchild Semiconductor)
Dual P-Channel/ Digital FET
July 1999
FDG6304P Dual P-Channel, Digital FET
General Description
These dual P-Channel logic level enhancement mode field effect transistors are pro
(17 views)
FDG6303N (Fairchild Semiconductor)
Dual N-Channel Digital FET
July 1999
FDG6303N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are pro
(16 views)
FDG6308P (Fairchild Semiconductor)
P-Channel MOSFET
FDG6308P
January 2001
FDG6308P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild
(15 views)
FDG6306P (ON Semiconductor)
P-Channel MOSFET
DATA SHEET www.onsemi.com
MOSFET– Specified, P-Channel, POWERTRENCH)
2.5 V
FDG6306P
General Description This P−Channel 2.5 V specified MOSFET is a r
(15 views)
FDG6304P (ON Semiconductor)
Dual P-Channel Digital FET
Digital FET, Dual P-Channel FDG6304P
General Description These dual P−Channel logic level enhancement mode field effect
transistors are produced usin
(15 views)
FDG6301N-F085 (ON Semiconductor)
Dual N-Channel Digital FET
Dual N-Channel, Digital FET
FDG6301N-F085
Features
• 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7
(14 views)
