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GHV-6 Datasheet | Specifications & PDF Download

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GHV-6 (GHV-2 - GHV-16) Surge Suppressors

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CGHV40100 - GaN HEMT

CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG
Rating: 1 ★ (5 votes)
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CGHV31500F1 - 500W GaN HEMT

CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HEMT Description Wolfspeed’s CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) desi
Rating: 1 ★ (5 votes)
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CGHV1F025S - GaN HEMT

CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT Description The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT
Rating: 1 ★ (5 votes)
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CGHV27015S - GaN HEMT

CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transis
Rating: 1 ★ (5 votes)
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CGHV40180F - GaN HEMT

CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The
Rating: 1 ★ (4 votes)
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CGHV14800 - GaN HEMT

CGHV14800 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transisto
Rating: 1 ★ (4 votes)
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CGHV1F006S - GaN HEMT

CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed
Rating: 1 ★ (4 votes)
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CGHV40030 - GaN HEMT

CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEM
Rating: 1 ★ (4 votes)
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CGHV1F025S - GaN HEMT

CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed
Rating: 1 ★ (4 votes)
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CGHV14800F - GaN HEMT

CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transist
Rating: 1 ★ (4 votes)
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CGHV1F025S - GaN HEMT

CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT Description Wolfspeed’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transist
Rating: 1 ★ (4 votes)
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CGHV40030 - GaN HEMT

CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor
Rating: 1 ★ (4 votes)
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CGHV40100 - 100W GaN HEMT

CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT
Rating: 1 ★ (4 votes)
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CGHV40180F - GaN HEMT

CGHV40180F 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (H
Rating: 1 ★ (4 votes)
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CGHV27200 - GaN HEMT

PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HE
Rating: 1 ★ (3 votes)

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