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MACOM
CGHV14500F - GaN HEMT
CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description The CGHV14500 is a gallium nitride (GaN) high electron mobility transis.
Wolfspeed
CGHV27015S - GaN HEMT
CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transis.
MACOM
CGHV40050 - GaN HEMT
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
MACOM
CGHV27030S - GaN HEMT
CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT Description The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) whi.
MACOM
CGHV40180F - GaN HEMT
CGHV40180F 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (H.
Cree
CGHV35400F - GaN HEMT
CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high el.
Cree
CGHV14800 - GaN HEMT
CGHV14800 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transisto.
Cree
CGHV59070 - RF Power GaN HEMT
PRELIMINARY CGHV59070 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobili.
General Semiconductor
GHV-7 - (GHV-2 - GHV-16) Surge Suppressors
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Cree
CGHV35060MP - GaN HEMT
PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, g.
Cree
CGHV35150 - GaN HEMT
CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor.
Cree
CGHV40030 - GaN HEMT
CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEM.
Cree
CGHV40050 - GaN HEMT
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The C.
Cree
CGHV59350 - GaN HEMT
PRELIMINARY CGHV59350 350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree’s CGHV59350 is a gallium nitride (Ga.
Cree
CGHV14250 - GaN HEMT
CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HE.
Cree
CGHV14500 - GaN HEMT
CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HE.
Cree
CGHV1F025S - GaN HEMT
CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed.
Cree
CGHV1J006D - GaN HEMT Die
CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon.
Cree
CGHV22100 - GaN HEMT
CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.
Cree
CGHV22200 - GaN HEMT
CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.
