GT30 Datasheet | Specifications & PDF Download

Silan Microelectronics SGT30T60SD1F(FD)_Datasheet 30A, 600V FIELD STOP IGBT DESCRIPTION The SGT30T60SD1F(FD) field stop IGBT adopts Silan Field Stop

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www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTE

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Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial

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Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2D1 IXGT 30N60B2D1 V

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GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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HiPerFAST TM IGBT IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi typ www.DataSheet4U.com = 600 V = 70 A = 2.7 V = 3

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GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • •

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Replaces DS5520-3.0 DGT305RE18 Gate Turn-off Thyristor DS5520-4 July 2014 (LN31742) FEATURES KEY PARAMETERS  Double Side Cooling  High Relia

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GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Uni

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APTGT300A170D3 Trench IGBT Power Module Phase leg ® www.datasheet4u.com VCES = 1700V IC = 300A @ Tc = 80°C Application • Welding converters • Switc

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www.vishay.com VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology PRIMARY CHARACTERIS

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GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • • • • T

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The Classic of Touch Solution GreenTouch3TM GT301L Capacitive Touch Sensor DATASHEET VER2.20 www.greenchip.co.kr Important Notice COPYRIGHT © 2009 B

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General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switchin

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www.DataSheet4U.com HiPerFAST with Diode TM IGBT C2-Class High Speed IGBTs IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE(sat) tfi typ = 600 V = 70

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HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE(sat) tfi(typ) = 600 V = 60 A = 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC

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DGT304RE DGT304RE Reverse Blocking Gate Turn-off Thyristor DS5518-2.1 February 2002 FEATURES s s s s s s s KEY PARAMETERS ITCM VDRM/VRRM IT(AV) dVD

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GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.5V

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DGT305SE DGT305SE Gate Turn-off Thyristor FEATURES I Double Side Cooling I High Reliability In Service I High Voltage Capability I Fault Protection

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