GT30 Datasheet | Specifications & PDF Download

www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTE

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GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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Silan Microelectronics SGT30T60SD1F(FD)_Datasheet 30A, 600V FIELD STOP IGBT DESCRIPTION The SGT30T60SD1F(FD) field stop IGBT adopts Silan Field Stop

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Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial

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Silan Microelectronics SGT30T60SD3PU_Datasheet 30A, 600V FIELD STOP IGBT DESCRIPTION SGT30T60SD3PU adopts Field Stop III IGBT technology, offer the

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Silan Microelectronics SGT30T60SDM1P7_Datasheet 30A, 600V FIELD STOP IGBT DESCRIPTION SGT30T60SDM1P7 adopts Field Stop III IGBT technology, offer th

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www.DataSheet.co.kr IGBT FGT303 ■Features • Generation 3 IGBT (Trench Technology) • Low VCE(sat): 1.3V typ • Large Collector Current: Icp=160A Marc

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GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • •

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Silan Microelectronics SGT30T60SD1F(FD)_Datasheet 30A, 600V FIELD STOP IGBT DESCRIPTION The SGT30T60SD1F(FD) field stop IGBT adopts Silan Field Stop

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Discrete IGBTs Silicon N-Channel IGBT GT30J341 1. Applications • Motor Drivers 2. Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) =

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APTGT300A170G Phase leg Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 1700V IC = 300A @ Tc = 80°C Application • Weldin

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APTGT300SK120G Buck chopper Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 1200V IC = 300A @ Tc = 80°C Application

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GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • • • • T

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RGT30NS65D 650V 15A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 15A 1.65V 133W lFeatures 1) Low Collector - Emitter

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GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit

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SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for so

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Discrete IGBTs Silicon N-Channel IGBT GT30J110SRA GT30J110SRA 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications • Dedi

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GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit

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The Classic of Touch Solution GreenTouch3TM GT301L Capacitive Touch Sensor DATASHEET VER2.20 www.greenchip.co.kr Important Notice COPYRIGHT © 2009 B

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