GT10/GT30 Technical Manual Matsushita Electric Wor.
ETC
GT30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
Toshiba
GT30J341 - Silicon N-Channel IGBT
Discrete IGBTs Silicon N-Channel IGBT GT30J341 1. Applications • Motor Drivers 2. Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) =.
Toshiba Semiconductor
GT30J322 - Silicon N-Channel IGBT
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.
Advanced Power Technology
APTGT300A60 - IGBT Power Module
APTGT300A60 Phase leg Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 600V IC = 300A @ Tc = 80°C Application • Welding c.
Advanced Power Technology
APTGT30H60T3 - IGBT Power Module
APTGT30H60T3 Full - Bridge Trench + Field Stop IGBT® www.datasheet4u.com Power Module 13 14 VCES = 600V IC = 30A @ Tc = 80°C Application • Welding co.
IXYS
IXGT30N60B2D1 - IGBT
Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2D1 IXGT 30N60B2D1 V.
Toshiba Semiconductor
GT30J121 - Silicon N-Channel IGBT
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Uni.
Toshiba Semiconductor
GT30J301 - N-Channel IGBT
GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.
Toshiba Semiconductor
GT30J311 - N-Channel IGBT
GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.
Toshiba Semiconductor
GT30J324 - Silicon N-Channel IGBT
GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Uni.
Dynex
DGT304RE - Reverse Blocking Gate Turn-off Thyristor
DGT304RE DGT304RE Reverse Blocking Gate Turn-off Thyristor DS5518-2.1 February 2002 FEATURES s s s s s s s KEY PARAMETERS ITCM VDRM/VRRM IT(AV) dVD.
Dynex
DGT304RE13 - Reverse Blocking Gate Turn-off Thyristor
DGT304RE DGT304RE Reverse Blocking Gate Turn-off Thyristor DS5518-2.1 February 2002 FEATURES s s s s s s s KEY PARAMETERS ITCM VDRM/VRRM IT(AV) dVD.
Dynex
DGT304SE - Gate Turn-off Thyristor
DGT304SE13 DGT304SE Gate Turn-off Thyristor Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002 APPLICATIONS s Variable speed A.C. mo.
IXYS Corporation
IXGT30N60B - HiPerFASTTM IGBT
HiPerFASTTM IGBT IXGH30N60B IXGT30N60B VCES IC25 VCE(sat) tfi = 600 V = 60 A = 1.8 V = 100 ns www.DataSheet4U.com Symbol VCES VCGR Test Conditio.
Advanced Power Technology
APTGT300A120 - IGBT Power Module
APTGT300A120 Phase leg Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 1200V IC = 300A @ Tc = 80°C Application • We.
Advanced Power Technology
APTGT300A170 - IGBT Power Module
APTGT300A170 Phase leg Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 1700V IC = 300A @ Tc = 80°C Application • Welding.
Advanced Power Technology
APTGT300DA120D3 - IGBT Power Module
APTGT300DA120D3 Boost chopper ® www.datasheet4u.com Trench IGBT Power Module 3 VCES = 1200V IC = 300A @ Tc = 80°C Application • AC and DC motor con.
Advanced Power Technology
APTGT300DA170D3 - IGBT Power Module
APTGT300DA170D3 Trench IGBT Power Module Boost chopper ® www.datasheet4u.com VCES = 1700V IC = 300A @ Tc = 80°C Application • AC and DC motor contr.
Advanced Power Technology
APTGT300DU120 - IGBT Power Module
APTGT300DU120 Dual common source Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module C1 Q1 G1 C2 Q2 G2 VCES = 1200V IC = 300A @ Tc = 80°C.
Advanced Power Technology
APTGT300SK120 - IGBT Power Module
APTGT300SK120 Buck chopper Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 1200V IC = 300A @ Tc = 80°C Application .
