INCHANGE 2SD Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·High speed. ·High breakdown voltage(VCBO=1500V). ·High reliability(Adoption of HVP process). ·Minimum L

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage

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Inchange Semiconductor Product Specification www.DataSheet4U.com Silicon NPN Power Transistors 2SD1413 DESCRIPTION ·With TO-220Fa package ·High DC

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1307 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 350V(Min) ·High DC cur

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD837 DESCRIPTION ·High DC Current Gain- : hFE= 1000(M

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isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5074 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Hig

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5703 DESCRIPTION ·High Breakdown Voltage

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isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5072 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Hig

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Inchange Semiconductor Product Specification www.DataSheet4U.com Silicon NPN Power Transistors 2SD1308 DESCRIPTION ·With TO-220 package ·Low colle

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CE

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2141 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= 3A ·Low Collect

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)C

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isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage- :

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isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdow

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isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5702 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Hig

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isc Silicon NPN Darlington Power Transistor 2SD1590 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Curren

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capabi

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD312 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·Fast Sw

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