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Infineon IMW Datasheet, Features, Application

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Infineon
rating-1 6

IMW65R107M1H - MOSFET

 IMW65R107M1H MOSFET 650VCoolSiCªM1SiCTrenchPowerDevice The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfi.
Infineon
rating-1 5

AIMW120R035M1H - MOSFET

 AIMW120R035M1H AIMW120R035M1H CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET Features Gate • Revolutionary semiconduc.
Infineon
rating-1 5

IMW65R007M2H - MOSFET

 IMW65R007M2H MOSFET CoolSiCªMOSFET650VG2 BuiltonInfineon’srobust2ndgenerationSiliconCarbidetrenchtechnology, the650VCoolSiC™MOSFETd.
Infineon
rating-1 5

IMW65R050M2H - MOSFET

 IMW65R050M2H MOSFET CoolSiCªMOSFET650VG2 BuiltonInfineon’srobust2ndgenerationSiliconCarbidetrenchtechnology, the650VCoolSiC™MOSFETd.
Infineon
rating-1 4

IMW120R045M1 - 1200V SiC Trench MOSFET

 IMW120R045M1 IMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha.
Infineon
rating-1 4

IMW120R060M1H - Silicon Carbide MOSFET

 IMW120R060M1H IMW120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.
Infineon
rating-1 4

AIMW120R045M1 - Silicon Carbide MOSFET

 AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Revolutionary semiconductor material - Silicon Carbide .
Infineon
rating-1 4

IMW65R015M2H - MOSFET

 IMW65R015M2H MOSFET CoolSiCªMOSFET650VG2 BuiltonInfineon’srobust2ndgenerationSiliconCarbidetrenchtechnology, the650VCoolSiC™MOSFETd.
Infineon
rating-1 4

IMW65R039M1H - MOSFET

 Public IMW65R039M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology develo.
Infineon
rating-1 3

IMW120R140M1H - Silicon Carbide MOSFET

 IMW120R140M1H IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.
Infineon
rating-1 3

IMW120R090M1H - Silicon Carbide MOSFET

 IMW120R090M1H IMW120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.
Infineon
rating-1 3

IMW65R027M1H - MOSFET

 IMW65R027M1H MOSFET 650VCoolSiCªM1SiCTrenchPowerDevice The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfi.
Infineon
rating-1 3

IMW65R020M2H - MOSFET

 IMW65R020M2H MOSFET CoolSiCªMOSFET650VG2 BuiltonInfineon’srobust2ndgenerationSiliconCarbidetrenchtechnology, the650VCoolSiC™MOSFETd.
Infineon
rating-1 3

IMWH170R450M1 - Silicon Carbide MOSFET

 IMWH170R450M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V at.
Infineon
rating-1 2

IMW120R030M1H - MOSFET

 IMW120R030M1H IMW120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c.
Infineon
rating-1 2

IMW120R350M1H - Silicon Carbide MOSFET

 IMW120R350M1H IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.
Infineon
rating-1 2

IMW120R220M1H - Silicon Carbide MOSFET

 IMW120R220M1H IMW120R220M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.
Infineon
rating-1 2

IMW120R007M1H - MOSFET

 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • ID.
Infineon
rating-1 2

IMW120R020M1H - MOSFET

 IMW120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • ID.
Infineon
rating-1 2

AIMW120R060M1H - MOSFET

 AIMW120R060M1H AIMW120R060M1H CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET Features • Revolutionary semiconductor ma.
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