P12N60 Datasheet | Specifications & PDF Download

S E M I C O N D U C T O R HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs Description The HGTP12N60C3, HGT1S12N60C3 an

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HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 File Number 4040.4 24A, 600V, UFS Series N-Channel IGBTs The HGTP12N60C3 and HGT1S12N60C3S are MOS

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STP12N60M2 N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic d

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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This fam

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HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gat

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HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS

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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 File Number 4411.2 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperf

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HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This

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HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free O

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HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free O

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FHP12N60 N MOS 。 AC-DC ，DC-DC，HPMW 。 ★ 12A,600V,RDS(on)(）0.6Ω ★ 、 ★ FHP12N60 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg

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SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=13.8pF(Typ.) • Low gate charge : Qg=41nC(Typ.) • Low RDS(

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HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A a

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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 File Number 4697.3 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast

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FQP12N60C — N-Channel QFET® MOSFET March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description These N-Channel enhancement mode pow

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SLP12N60C / SLF12N60C SLP12N60C / SLF12N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60

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www.DataSheet.in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast

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HFP12N60S Nov 2007 HFP12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avala

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