TGW Datasheet | Specifications & PDF Download

ÓÉ Foxit PDF Editor ±à¼°æȨËùÓÐ (c) by Foxit Software Company, 2004 ½öÓÃÓÚÆÀ¹À¡£ TDA7388 25W (BTL)—YD7388 ： TDA7388 25W （BTL）， 。 ： ：Po=25W×4（Vcc＝1

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STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features Type VCES STGW30NC120HD 1200V VCE(sat) @25°C < 2.75V IC @100°C 3

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STGF30NC60S STGP30NC60S, STGWF30NC60S 30 A, 600 V, fast IGBT Features ■ Optimized performance for medium operating frequencies up to 5 kHz in hard sw

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STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features Type VCES STGW30NC120HD 1200V VCE(sat) @25°C < 2.75V IC @100°C 3

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STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long

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www.DataSheet4U.com STGW30N90D N-channel 900V - 30A - TO-247 Very fast PowerMESH™ IGBT Preliminary Data Features Type STGW30N90D ■ ■ ■ ■ ■ ■ VCES 9

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STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB TO-3P 3 2 1 Figure 1: Internal schem

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STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TA

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STGFW20H65FB, STGW20H65FB, STGWT20H65FB Datasheet Trench gate field-stop 650 V, 20 A high speed HB series IGBT 1 TO-3PF 3 2 1 TAB 3 2 1 TO-247 3

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STGW45HF60WDI 45 A, 600 V ultra fast IGBT with low drop diode Features ■ Improved Eoff at elevated temperature ■ Low VF soft recovery antiparallel di

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STGW20NB60K N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE STGW20NB60K s s s s s s s s s VCES 600 V VCE(sat) < 2.8 V IC 20

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® STGW20NB60H N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT T YPE STGW 20NB60H s V CES 600 V V CE(sat) < 2.8 V IC 20 A s s s s s HIGH INPUT IMPED

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www.DataSheet4U.com STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH™ IGBT General features Type STGW35NB60SD ■ ■ ■ VCES 600V VCE(sat)

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STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long

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Huajing Discrete Devices Silicon General Description： CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Tec

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STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT Table 1: General Features TYPE STGW20NC60VD s s Figure 1: Package IC @100°C 30 A

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CSC3301 DC/DC CSC3301 、 （380KHz）。 2.5 4.5V， 5V ， 250mA。（ VIN VOUT 2 ） CSC3301 。 ， ， 。， VOUT GND 。 。 ，。 ， 1uA。 SOT23-6 VOUT 1 6 C+ GND

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STGB19NC60W STGP19NC60W, STGW19NC60W 19 A - 600 V - ultra fast IGBT Features ■ High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

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STGW25M120DF3 Datasheet Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package 3 2 1 TO-247 Features • Maximum junction te

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STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT 3 2 1 TO-247 TAB TO-3P 3 2 1 Features • Maximu

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