TIM1414-7 Datasheet | Specifications & PDF Download

MICROWAVE POWER GaAs FET TIM1414-15L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 14.0GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0d

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www.DataSheet4U.com TOSHIBA Oct. 1999 TIM1414-10LA-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power

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MICROWAVE POWER GaAs FET TIM1414-18L-252 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB=

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www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 38.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.5dB at 14.0GHz to 14.5GHz ･HERMETICALLY

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www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =40.5 dBm at 14.0 G

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www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH

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www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =39.5 dBm at 14.0 G

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www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features • Low intermodulation di

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www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 33.5 dBm at 14.0

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www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 36.5 dBm at 14.0

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ･LOW INTERMOD

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