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HGTD1N120BNS, HGTP1N120BN Data Sheet January 2000 File Number 4649.2 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-

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HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT)

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HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 File Number 4652.2 6.2A, 1200V, NPT Series N-Channel IGBT The HGTD1N120CNS, and the HGTP1N120CN are

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and curren

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HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 File Number 4651.1 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD

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Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID

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isc N-Channel MOSFET Transistor IXTP1N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltag

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Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 100

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NWK933 NWK933 3.3V 10/100 Fast Ethernet Transceiver to MII DS5029 Issue no 2.1 May 1999 Features Odering Information q q q q q q q q q q q q q q q q

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N50

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N1

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HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The

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SL6619 Direct Conversion FSK Data Receiver Preliminary Information Supersedes July 1996 version, DS3853 - 3.5 DS3853 - 4.1 April 1998 The SL6619 is a

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N80

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N60

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www.DataSheet4U.com STP1N120 N-channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH™ Power MOSFET PRELIMINARY DATA General features Type

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www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25

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