Thermall Datasheet | Specifications & PDF Download

NOTES Designing with thermally protected TMOV Varistors in TVSS Applications Introduction Metal Oxide Varistors (MOVs) are commonly used to suppress t

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PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in D

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PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

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120-001 Type A Series 72 Annular Convoluted Tubing Thermally Stabilized Kynar® 120-001-16 Product Series Basic No. Dash No. (Table I) TYPE A A DIA

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si

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GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on

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PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended f

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advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz Description The GTV

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GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz Description The GTRB204402FC/1 is a 350-watt (P3dB) GaN o

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PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The

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advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTV

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 – 3500 MHz Description The GTVA355001EC and GTVA355001FC are 500-

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PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The

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PXAC200902FC Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz Description The PXAC200902FC is a 90-watt LDMOS FET with an asymm

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GTVA123501FA Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 – 1400 MHz Description The GTVA123501FA is a 350-watt GaN on SiC high

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GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra

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GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si

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