Thermall Datasheet | Specifications & PDF Download

PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

Rating: 1 ★ (11 votes)

GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra

Rating: 1 ★ (8 votes)

PXFC193808SV Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz Description The PXFC193808SV is a 380-watt LDMOS FET intended f

Rating: 1 ★ (7 votes)

PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internall

Rating: 1 ★ (7 votes)

advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTV

Rating: 1 ★ (7 votes)

PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asym

Rating: 1 ★ (7 votes)

GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si

Rating: 1 ★ (7 votes)

120-001 Type A Series 72 Annular Convoluted Tubing Thermally Stabilized Kynar® 120-001-16 Product Series Basic No. Dash No. (Table I) TYPE A A DIA

Rating: 1 ★ (6 votes)

PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.DataSheet4U

Rating: 1 ★ (6 votes)

PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in

Rating: 1 ★ (6 votes)

GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

Rating: 1 ★ (6 votes)

GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si

Rating: 1 ★ (6 votes)

GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

Rating: 1 ★ (6 votes)

PXFC192207NF Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207NF is a 220-watt LDMOS FET intended f

Rating: 1 ★ (5 votes)

PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LD

Rating: 1 ★ (5 votes)

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The

Rating: 1 ★ (5 votes)

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA21

Rating: 1 ★ (5 votes)

PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally

Rating: 1 ★ (5 votes)

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz PTFA260851E PTFA260851F Description The

Rating: 1 ★ (5 votes)

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz PTFA260851E PTFA260851F Description The

Rating: 1 ★ (5 votes)