WINSEMI SEMICONDUCTOR Datasheet | Specifications & PDF Download

www.DataSheet.in WTPB8A60CW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=8A ■ Low

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www.DataSheet.in WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Curr

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www.DataSheet.in WTPA24A60BW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=24A ■

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WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=12A ■

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www.DataSheet.in 4A60 SW WTPB WTPB4 60SW Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State

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WSP20D100 Power Schottky Rectifier Features ■ 20A(2×10A),100V ■ VF(max)=0.68V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure

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www.DataSheet.in WFF12N60 Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 39nC) ■ Fast Switc

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WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.60V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■

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www.DataSheet.in P10N6 5 WF WFP 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43

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www.DataSheet.in F10N6 5 WF WFF 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43

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www.DataSheet.in WFY4101 Trench Power MOSFET −23 −20 V, Single P−Channel, SOT SOT− Features ■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V ■ −1.8 V Rate

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www.DataSheet.in P10N60 WF WFP Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC)

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www.DataSheet.in P12N6 5 WF WFP N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ F

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www.DataSheet.in WFP18N20 Silicon N-Channel MOSFET Features � � � � � 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40nC) Fast Sw

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www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast

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www.DataSheet4U.com SBF13009-O High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wid

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www.DataSheet.in WTF4A60 Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(R

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www.DataSheet.in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast

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www.DataSheet.in WFF9N50 Silicon N-Channel MOSFET Features � � � � � 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Swit

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www.DataSheet.in F12N6 5 WF WFF N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ F

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