WINSEMI SEMICONDUCTOR Datasheet | Specifications & PDF Download

www.DataSheet4U.com SBW13009-S High Voltage Fast-Switching NPN Power Transistor Features � � � Very High Switching Speed High Voltage Capability Wid

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www.DataSheet.in WIS2269N8 Current Mode PWM Controller GERNERAL DESCRIPTION WIS2269 is a highly integrated, high performance current mode PWM control

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www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast

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www.DataSheet4U.com SBW13009-0 High voltage Fast Switching NPN Power Transistor Features � � � Very High Switching Speed High voltage Capability Wide

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www.DataSheet4U.com SBF13009-O High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wid

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WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=12A ■

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www.DataSheet.in WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Curr

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WGW15G120 Low Loss IGBT Features „ „ „ „ „ 15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=25℃ low Gate charge(Typ.= 85nC) NPT Technology, Positive temperat

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www.DataSheet.in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast

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www.DataSheet.in 2SK2611 Silicon N-Channel MOSFET Features � � � � � 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Swit

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WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.60V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■

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www.DataSheet.in WSP20D65 Power Schottky Rectifier Features ■ 20A(1×10A),65V ■ VF(max)=0.68V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common ca

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www.DataSheet.in WSAD92-02 20A,200V Ultrafast Dual Diode Features ■ Ultrafast recovery time ■ Low forward voltage drop ■ Low leakage current ■ High

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www.DataSheet.in WIY2263 Current Mode PWM Controller GERNERAL DESCRIPTION WIY2263 is a highly integrated current mode PWM control IC optimized for hi

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www.DataSheet.in P12N6 5 WF WFP N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ F

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www.DataSheet.in WFP18N20 Silicon N-Channel MOSFET Features � � � � � 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40nC) Fast Sw

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SBW3320 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA TO3P

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www.DataSheet.in 9N20 WFP FP9 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast S

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www.DataSheet.in 4A60 SW WTPB WTPB4 60SW Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State

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WFP2N60 Silicon N-Channel MOSFET Features ■ 2A,650V(Type.), RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 15nC) ■ Fast Switching Capability

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