WINSEMI SEMICONDUCTOR Datasheet | Specifications & PDF Download

www.DataSheet.in WSP20D65 Power Schottky Rectifier Features ■ 20A(1×10A),65V ■ VF(max)=0.68V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common ca

Rating: 1 ★ (4 votes)

www.DataSheet.in WTPA24A60BW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=24A ■

Rating: 1 ★ (3 votes)

www.DataSheet.in 4A60 SW WTPB WTPB4 60SW Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State

Rating: 1 ★ (3 votes)

WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.60V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■

Rating: 1 ★ (3 votes)

www.DataSheet.in WIY2263 Current Mode PWM Controller GERNERAL DESCRIPTION WIY2263 is a highly integrated current mode PWM control IC optimized for hi

Rating: 1 ★ (3 votes)

WGW15G120 Low Loss IGBT Features „ „ „ „ „ 15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=25℃ low Gate charge(Typ.= 85nC) NPT Technology, Positive temperat

Rating: 1 ★ (3 votes)

WFY3N02 20V N−Channel MOSFET Features ■ 2.8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.5V ■ 1.2 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Sm

Rating: 1 ★ (3 votes)

WFY3P02 −20V, P−Channel MOSFET , Features ■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Moun

Rating: 1 ★ (3 votes)

www.DataSheet.in WFP650 Silicon N-Channel MOSFET Features � � � � � � 28A, 200v, RDS(on)=0.085Ω @VGS=10V Low gate charge (typical 95 nC) Low crss (ty

Rating: 1 ★ (3 votes)

www.DataSheet.in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast

Rating: 1 ★ (3 votes)

www.DataSheet.in P12N6 5 WF WFP N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ F

Rating: 1 ★ (3 votes)

www.DataSheet.in N50 WFF13 F13N50 Silicon N-Channel MOSFET Features � � � � � 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC)

Rating: 1 ★ (3 votes)

www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast

Rating: 1 ★ (3 votes)

www.DataSheet4U.com SBW13009-0 High voltage Fast Switching NPN Power Transistor Features � � � Very High Switching Speed High voltage Capability Wide

Rating: 1 ★ (3 votes)

www.DataSheet.in WTPB8A60CW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=8A ■ Low

Rating: 1 ★ (2 votes)

SBW3320 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA TO3P

Rating: 1 ★ (2 votes)

WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=12A ■

Rating: 1 ★ (2 votes)

www.DataSheet.in WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Curr

Rating: 1 ★ (2 votes)

www.DataSheet.in D4A60S WT WTD Sensitive Gate Triac Features � � � � � Repetitive Peak off -State Voltage:600V R.M.S On-State Current(IT(RMS)=4A) Low

Rating: 1 ★ (2 votes)

WSP20D100 Power Schottky Rectifier Features ■ 20A(2×10A),100V ■ VF(max)=0.68V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure

Rating: 1 ★ (2 votes)