WINSEMI SEMICONDUCTOR Datasheet | Specifications & PDF Download

www.DataSheet.in WIS2269N8 Current Mode PWM Controller GERNERAL DESCRIPTION WIS2269 is a highly integrated, high performance current mode PWM control

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WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.60V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■

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www.DataSheet.in 2SK2611 Silicon N-Channel MOSFET Features � � � � � 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Swit

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SBP13007D High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse B

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www.DataSheet.in P10N6 5 WF WFP 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43

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www.DataSheet4U.com SBW13009-S High Voltage Fast-Switching NPN Power Transistor Features � � � Very High Switching Speed High Voltage Capability Wid

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WSP20D100 Power Schottky Rectifier Features ■ 20A(2×10A),100V ■ VF(max)=0.68V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure

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www.DataSheet.in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast

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www.DataSheet.in 9N20 WFP FP9 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast S

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www.DataSheet.in F10N6 5 WF WFF 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43

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www.DataSheet4U.com SBP13007-O High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wid

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www.DataSheet.in WTPB8A60CW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=8A ■ Low

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www.DataSheet.in WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Curr

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www.DataSheet.in 4A60 SW WTPB WTPB4 60SW Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State

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www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast

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www.DataSheet.in WTF4A60 Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(R

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www.DataSheet.in WFP650 Silicon N-Channel MOSFET Features � � � � � � 28A, 200v, RDS(on)=0.085Ω @VGS=10V Low gate charge (typical 95 nC) Low crss (ty

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www.DataSheet.in P10N60 WF WFP Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC)

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www.DataSheet.in WFP18N20 Silicon N-Channel MOSFET Features � � � � � 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40nC) Fast Sw

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www.DataSheet4U.com SBF13009-O High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wid

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