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WINSEMI SEMICONDUCTOR Datasheet, Features, Application

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WINSEMI SEMICONDUCTOR

SBP13007-O - High Voltage Fast-Switching NPN Power Transistor

www.DataSheet4U.com SBP13007-O High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wid.
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WINSEMI SEMICONDUCTOR

SBW13009-0 - High voltage Fast Switching NPN Power Transistor

www.DataSheet4U.com SBW13009-0 High voltage Fast Switching NPN Power Transistor Features � � � Very High Switching Speed High voltage Capability Wide.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WIS2269N8 - Current Mode PWM Controller

www.DataSheet.in WIS2269N8 Current Mode PWM Controller GERNERAL DESCRIPTION WIS2269 is a highly integrated, high performance current mode PWM control.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

SBW13009-S - High voltage Fast Switching NPN Power Transistor

www.DataSheet4U.com SBW13009-S High Voltage Fast-Switching NPN Power Transistor Features � � � Very High Switching Speed High Voltage Capability Wid.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

SBW3320 - High Voltage Fast-Swit NPN Power Transistor

SBW3320 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA TO3P.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WFF10N65 - Silicon N-Channel MOSFET

www.DataSheet.in F10N6 5 WF WFF 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WTPB8A60CW - Bi-Directional Triode Thyristor

www.DataSheet.in WTPB8A60CW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=8A ■ Low.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WFP12N60 - Silicon N-Channel MOSFET

www.DataSheet.in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast .
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WINSEMI SEMICONDUCTOR

WFP9N20 - Silicon N-Channel MOSFET

www.DataSheet.in 9N20 WFP FP9 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast S.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WFF13N50 - Silicon N-Channel MOSFET

www.DataSheet.in N50 WFF13 F13N50 Silicon N-Channel MOSFET Features � � � � � 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC).
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WFF10N60 - Silicon N-Channel MOSFET

www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast .
1.0 · rating-1
WINSEMI SEMICONDUCTOR

2SK2611 - Silicon N-Channel MOSFET

www.DataSheet.in 2SK2611 Silicon N-Channel MOSFET Features � � � � � 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Swit.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WTPA24A60BW - Bi-Directional Triode Thyristor

www.DataSheet.in WTPA24A60BW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=24A ■.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WTPB12A60CW - Sensitive Gate Bi-Directional Triode Thyristor

WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=12A ■ .
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WTPB16A60SW - Sensitive Gate Bi-Directional Triode Thyristor

www.DataSheet.in WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Curr.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WTPB4A60SW - Bi-Directional Triode Thyristor

www.DataSheet.in 4A60 SW WTPB WTPB4 60SW Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State .
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WTF4A60 - Bi-Directional Triode Thyristor

www.DataSheet.in WTF4A60 Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(R.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WTD4A60S - Sensitive Gate Triac

www.DataSheet.in D4A60S WT WTD Sensitive Gate Triac Features � � � � � Repetitive Peak off -State Voltage:600V R.M.S On-State Current(IT(RMS)=4A) Low.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WTD8A60 - Sensitive Gate Triac

www.DataSheet.in D8 A60 WT WTD8 D8A60 Sensitive Gate Triac Features � � � � Repetitive Peak off -State Voltage:600V R.M.S On-State Current(IT(RMS)=8A.
1.0 · rating-1
WINSEMI SEMICONDUCTOR

WSP10D100 - Power Schottky Rectifier

WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.60V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■.
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