GT50G321 - silicon N-channel IGBT

Datasheet Details

Part number	GT50G321
Manufacturer	Toshiba Electronic Devices & Storage
File Size	147.25 KB
Description	silicon N-channel IGBT
Datasheet	GT50G321 Datasheet
Additional preview pages of the GT50G321 datasheet.

📁 Similar Datasheet

GT50G102 - Insulated Gate Bipolar Transistor (ETC)
GT50J101 - TRANSISTOR IGBT (Toshiba)
GT50J123 - Silicon N-Channel IGBT (Toshiba)
GT50J341 - Silicon N-Channel IGBT (Toshiba)
GT50J342 - Silicon N-Channel IGBT (Toshiba)
GT50JR21 - Silicon N-Channel IGBT (Toshiba)
GT50JR22 - Silicon N-Channel IGBT (Toshiba)
GT50N324 - silicon N-channel IGBT (Toshiba)
GT50NR21 - Silicon N-Channel IGBT (Toshiba)
GT52N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)

Other Datasheets by Toshiba Semiconductor

GT50J102 - silicon N-channel IGBT
GT50J121 - silicon N-channel IGBT
GT50J122 - silicon N-channel IGBT
GT50J301 - silicon N-channel IGBT
GT50J322 - silicon N-channel IGBT
GT50J325 - Silicon N-Channel IGBT
GT50J327 - silicon N-channel IGBT
GT50J328 - Silicon N-Channel IGBT

Full PDF Text Transcription

Click to expand full text

GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs (typ.) (IC = 60 A) · Low saturation voltage: VCE (sat) = 1.8 V (typ.

Published: Mar 23, 2005 |