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CS4N90A3HD-G Silicon N-Channel Power MOSFET

CS4N90A3HD-G Description

Silicon N-Channel Power MOSFET ○R CS4N90 A3HD-G General .
VDSS 900 CS4N90 A3HD-G, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 100 which.

CS4N90A3HD-G Features

* Fast Switching
* Low ON Resistance(Rdson≤3Ω)
* Low Gate Charge (Typical Data:25.2nC)
* Low Reverse transfer capacitances(Typical:7.4pF)

CS4N90A3HD-G Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source V

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Datasheet Details

Part number
CS4N90A3HD-G
Manufacturer
CR Micro
File Size
546.25 KB
Datasheet
CS4N90A3HD-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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