CGH40025 RF Power GaN HEMT

Cree

CGH40025 Description

CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH40025, operat.
RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.

CGH40025 Features

* Up to 6 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 62 % Efficiency at PSAT

CGH40025 Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages. PPacNk:aCgGeHT4y0p0e2: 454P0a1n9d6CaGndH4404002156F6 FEATU

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CGH40025 Datasheet Preview — Preview of CGH40025 PDF

Datasheet Details

Part number: CGH40025
Manufacturer: Cree
File Size: 1.22 MB
Datasheet: CGH40025-Cree.pdf
Description: RF Power GaN HEMT

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Power GaN HEMT Cree

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