Datasheet4U Logo Datasheet4U.com

CGH40025 Datasheet - Cree

CGH40025-Cree.pdf

Preview of CGH40025 PDF
CGH40025 Datasheet Preview Page 2 CGH40025 Datasheet Preview Page 3

Datasheet Details

Part number:

CGH40025

Manufacturer:

Cree

File Size:

1.22 MB

Description:

Rf power gan hemt.

CGH40025, RF Power GaN HEMT

RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.1pF, 0603 CAP, 0.5pF, +/-0.05pF, 0603 CAP, 1.0pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF,

CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits.

The transistor is available in a screw-down, flange package and solder-down, pill pack

CGH40025 Features

* Up to 6 GHz Operation

* 15 dB Small Signal Gain at 2.0 GHz

* 13 dB Small Signal Gain at 4.0 GHz

* 30 W typical PSAT

* 62 % Efficiency at PSAT

* 28 V Operation APPLICATIONS

* 2-Way Private Radio

* Broadband Amplifiers

📁 Related Datasheet

📌 All Tags

Cree CGH40025-like datasheet