* Up to 6 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 62 % Efficiency at PSAT
* 28 V Operation APPLICATIONS
* 2-Way Private Radio
* Broadband Amplifiers
CGH40025
Cree
1.22 MB
Rf power gan hemt.
CGH40025
25 W, RF Power GaN HEMT
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operat.
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