CGH40025 RF Power GaN HEMT

Cree

Description

CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH40025, operat.
RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.

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CGH40025 Datasheet Preview — Preview of CGH40025 PDF

Datasheet Specifications

Part number: CGH40025
Manufacturer: Cree
File Size: 1.22 MB
Datasheet: CGH40025-Cree.pdf
Description: RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 62 % Efficiency at PSAT

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages. PPacNk:aCgGeHT4y0p0e2: 454P0a1n9d6CaGndH4404002156F6 FEATU

CGH40025 Distributors

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CGH40025 Power GaN HEMT Cree

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