CGHV40050 GaN HEMT

Cree

CGHV40050 Description

CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The C.
RES, 560Ohms, 0805, HIGH POWER SMT RES, 3.

CGHV40050 Features

* Up to 4 GHz Operation
* 77 W Typical Output Power
* 17.5 dB Small Signal Gain at 1.8 GHz

CGHV40050 Applications

* up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow b

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CGHV40050 Datasheet Preview — Preview of CGHV40050 PDF

Datasheet Details

Part number: CGHV40050
Manufacturer: Cree
File Size: 2.72 MB
Datasheet: CGHV40050-Cree.pdf
Description: GaN HEMT

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GaN HEMT Cree

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