Datasheet Specifications
- Part number
- CGHV40050
- Manufacturer
- Cree
- File Size
- 2.72 MB
- Datasheet
- CGHV40050-Cree.pdf
- Description
- GaN HEMT
Description
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The C.
Features
* Up to 4 GHz OperationApplications
* up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow bCGHV40050 Distributors
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