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CGHV40050

GaN HEMT

CGHV40050 Features

* Up to 4 GHz Operation

* 77 W Typical Output Power

* 17.5 dB Small Signal Gain at 1.8 GHz

* Application Circuit for 0.8 - 2.0 GHz

* 53 % Efficiency at PSAT

* 50 V Operation Units dB W % dB Rev 1.0 - July 2015 Subject to change without notice.

CGHV40050 General Description

RES, 560Ohms, 0805, HIGH POWER SMT RES, 3.6Ohms, 1005, HIGH POWER SMT RES, SMT, 0805, 22 OHM RES, SMT, 0805, 1OHM CAP, 56 PF +/- 5%,, 250V, 0805, ATC 600F CAP, 24 pF +/- 5%, 250V, 0805, ATC 600F CAP, 1.1pF, +/-0.1pF, 250V, 0805, ATC600F CAP, 0.1 PF +/- 0.05 pF, 0805, ATC 600F CAP, 240pF, +/-5%, 0805.

CGHV40050 Datasheet (2.72 MB)

Preview of CGHV40050 PDF

Datasheet Details

Part number:

CGHV40050

Manufacturer:

Cree

File Size:

2.72 MB

Description:

Gan hemt.
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The C.

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CGHV40050 GaN HEMT Cree

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