Part number:
CGHV40050
Manufacturer:
Cree
File Size:
2.72 MB
Description:
Gan hemt.
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The C.
* Up to 4 GHz Operation
* 77 W Typical Output Power
* 17.5 dB Small Signal Gain at 1.8 GHz
* Application Circuit for 0.8 - 2.0 GHz
* 53 % Efficiency at PSAT
* 50 V Operation Units dB W % dB Rev 1.0 - July 2015 Subject to change without notice.
CGHV40050
Cree
2.72 MB
Gan hemt.
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The C.
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