MTB35N04J3 N -Channel Enhancement Mode Power MOSFET

Cystech Electonics

MTB35N04J3 Description

CYStech Electronics Corp.N -Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec.No.: C453J3 Issued Date : 2009.03.11 Revised Date : Pag.

MTB35N04J3 Features

* Low Gate Charge
* Simple Drive Requirement
* RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) 40V 12A 35mΩ Equivalent Circuit MTB35N04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol

MTB35N04J3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB35N04J3 CYStek Product Specification

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MTB35N04J3 Datasheet Preview — Preview of MTB35N04J3 PDF

Datasheet Details

Part number: MTB35N04J3
Manufacturer: Cystech Electonics
File Size: 345.22 KB
Datasheet: MTB35N04J3_CystechElectonics.pdf
Description: N -Channel Enhancement Mode Power MOSFET

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-Channel Enhancement Mode Power MOSFET Cystech Electonics

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