FDMC86260 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC86260 N-Channel Power Trench® MOSFET FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ December 2012 .
Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5. Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4. High performance technology.

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Datasheet Specifications

Part number: FDMC86260
Manufacturer: Fairchild Semiconductor
File Size: 214.20 KB
Datasheet: FDMC86260-FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

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FDMC86260 N-Channel Power Trench MOSFET Fairchild Semiconductor

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