Datasheet Details
| Part number | FDMC86260 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 214.20 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
 FDMC86260 Datasheet
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| Part number | FDMC86260 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 214.20 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
FDMC86260 Datasheet
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Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A High performance technology for extremely low rDS(on) 100% UIL Tested Termination is Lead-free RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Application
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