FDMC86248 Datasheet - ON Semiconductor

FDMC86248, N-Channel MOSFET

MOSFET * N-Channel, POWERTRENCH) 150 V, 13 A, 90 mW FDMC86248 General Description This N *Channel MOSFET is produced using onsemi‘s ad

Features

* Max RDS(on) = 90 mW at VGS = 10 V, ID = 3.4 A
* Max RDS(on) = 125 mW at VGS = 6 V, ID = 2.9 A
* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
* 100% UIL Tested
* Pb

Applications

* Primary MOSFET
* MV Synchronous Rectifier MAXIMUM RATINGS (TA = 25°C unless otherwise noted. ) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous
* Continuous (Note 1a)
* Pulsed TC = 25

FDMC86248-ONSemiconductor.pdf