FDMC86248 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 150 V, 13 A, 90 mW FDMC86248 General .
This N. Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

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Datasheet Specifications

Part number: FDMC86248
Manufacturer: ON Semiconductor ↗
File Size: 412.42 KB
Datasheet: FDMC86248-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 90 mW at VGS = 10 V, ID = 3.4 A
* Max RDS(on) = 125 mW at VGS = 6 V, ID = 2.9 A
* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
* 100% UIL Tested
* Pb

Applications

* Primary MOSFET
* MV Synchronous Rectifier MAXIMUM RATINGS (TA = 25°C unless otherwise noted. ) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous
* Continuous (Note 1a)
* Pulsed TC = 25

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FDMC86248 N-Channel MOSFET ON Semiconductor

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