FDMS8320LDC Datasheet - Fairchild Semiconductor

N-Channel Dual Cool Power Trench MOSFET

FDMS8320LDC Features

* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A

* Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MSL

FDMS8320LDC General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient th.

FDMS8320LDC Datasheet (290.84 KB)

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Datasheet Details

Part number:

FDMS8320LDC

Manufacturer:

Fairchild Semiconductor

File Size:

290.84 KB

Description:

N-channel dual cool power trench mosfet.
FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET October 2012 FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET 40 V, 130 A, 1.1 mΩ Fea.

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FDMS8320LDC N-Channel Dual Cool Power Trench MOSFET Fairchild Semiconductor

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FDMS8320LDC Features

FDMS8320LDC General Description

Datasheet Details

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FDMS8320LDC Distributor