FDMS8320LDC N-Channel Dual Cool Power Trench MOSFET

Fairchild Semiconductor

Description

FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET October 2012 FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET 40 V, 130 A, 1.1 mΩ Fea.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.

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Datasheet Specifications

Part number: FDMS8320LDC
Manufacturer: Fairchild Semiconductor
File Size: 290.84 KB
Datasheet: FDMS8320LDC-FairchildSemiconductor.pdf
Description: N-Channel Dual Cool Power Trench MOSFET

Features

* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A
* Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* MSL

Applications

* OringFET / Load Switching
* Synchronous Rectification
* DC-DC Conversion Pin 1 S D D D D S S D D G S S S Pin 1 S G Top Power 56 Bottom D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Vo

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FDMS8320LDC N-Channel Dual Cool Power Trench MOSFET Fairchild Semiconductor

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