FDMS8320LDC Datasheet - Fairchild Semiconductor

FDMS8320LDC N-Channel Dual Cool Power Trench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient th.

FDMS8320LDC Features

* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A

* Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MSL

FDMS8320LDC Datasheet (290.84 KB)