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FDMS86200 N-Channel MOSFET

FDMS86200 Description

FDMS86200 N-Channel Power Trench® MOSFET November 2012 FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-.

FDMS86200 Features

* Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
* Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* MSL1 robust package design
* 100% UIL tested
* RoHS Compliant General Descr

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDMS86200-like datasheet