Datasheet Details
- Part number
- BSS123W
- Manufacturer
- Fairchild Semiconductor
- File Size
- 215.35 KB
- Datasheet
- BSS123W-FairchildSemiconductor.pdf
- Description
- N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS123W Description
BSS123W * N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field .
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.
BSS123W Features
* 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
* High Density Cell Design for Low RDS(ON)
* Rugged and Reliable
* Ultra Small Surface Mount Package
* Very Low Capacitance
* Fast Switching Speed
* Lead Free / RoHS Com
BSS123W Applications
* such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications. D
D
S G SOT-323
GS
Ordering Information
Part Number BSS123W
Marking SA
Package SOT-323 3L
Packing Method Tape and Reel
Abso
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