FDMC8678S N-Channel Power Trench MOSFET

Fairchild Semiconductor

FDMC8678S Description

FDMC8678S N-Channel Power Trench® SyncFETTM July 2009 FDMC8678S N-Channel Power Trench 30V, 18A, 5.2mΩ .
tm The FDMC8678S has been designed to minimize losses in power conversion applications.

FDMC8678S Features

* Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* SyncFET Schottky Body Diode
* MSL1 robust package design
* RoHS Compliant ® Sy

FDMC8678S Applications

* Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters

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Datasheet Details

Part number: FDMC8678S
Manufacturer: Fairchild Semiconductor
File Size: 385.24 KB
Datasheet: FDMC8678S_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

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N-Channel Power Trench MOSFET Fairchild Semiconductor

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