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FDMS3660S Asymmetric Dual N-Channel MOSFET

FDMS3660S Description

FDMS3660S PowerTrench® Power Stage FDMS3660S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

FDMS3660S Features

* Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
* Low inductance packaging shortens rise/

FDMS3660S Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 Pin 1 G1 D1 D1 D1 D1 S2 5 Q2 4 D1 PHASE (S1/D2) G2 S2 S2 S2 Top Power 56 Bottom S2 6 S2 7 G2 8 PHASE 3 D1 2 D1 Q1 1 G1 MOSFET Maximum Ratings TA = 25 °C unless other

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Datasheet Details

Part number
FDMS3660S
Manufacturer
Fairchild Semiconductor
File Size
577.12 KB
Datasheet
FDMS3660S-FairchildSemiconductor.pdf
Description
Asymmetric Dual N-Channel MOSFET

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Asymmetric Dual N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDMS3660S-like datasheet