Datasheet4U Logo Datasheet4U.com

FDMS3669S - MOSFET

FDMS3669S Description

FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

FDMS3669S Features

* Q1: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel
* Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
* Low inductance packaging shortens rise

FDMS3669S Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 P

📥 Download Datasheet

Preview of FDMS3669S PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDMS3602S - 25V Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
  • FDMS3604S - N-Channel MOSFET (ON Semiconductor)
  • FDMS3606AS - Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
  • FDMS3672 - N-Channel MOSFET (ON Semiconductor)
  • FDMS3500 - N-Channel MOSFET (ON Semiconductor)
  • FDMS3572 - N-Channel MOSFET (ON Semiconductor)
  • FDMS003N08C - N-Channel MOSFET (ON Semiconductor)
  • FDMS007N08LC - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDMS3669S-like datasheet

FDMS3669S Stock/Price