FDMS86202 - MOSFET

Fairchild Semiconductor

FDMS86202 Datasheet Preview — Preview of FDMS86202 PDF

Datasheet Details

Part number	FDMS86202
Manufacturer	Fairchild ↗ Semiconductor
File Size	262.63 KB
Description	MOSFET
Datasheet	FDMS86202-FairchildSemiconductor.pdf

FDMS86202 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. DC-DC Conversion RoHS Compliant Top Pin 1 Bottom S Pin 1 S S G S S D D D D D D SD GD Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Sou

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A.
Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
MSL1 robust package design.
100% UIL tested General.

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Published: Jan 10, 2017 |