FDMS86202ET120 - MOSFET

Fairchild Semiconductor

FDMS86202ET120 Datasheet Preview — Preview of FDMS86202ET120 PDF

Datasheet Details

Part number	FDMS86202ET120
Manufacturer	Fairchild ↗ Semiconductor
File Size	231.91 KB
Description	MOSFET
Datasheet	FDMS86202ET120-FairchildSemiconductor.pdf

FDMS86202ET120 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Dr

Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A.
Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: Jan 10, 2017 |