FDMS8622 - N-Channel MOSFET

Fairchild Semiconductor

FDMS8622 Datasheet Preview — Preview of FDMS8622 PDF

Datasheet Details

Part number	FDMS8622
Manufacturer	Fairchild ↗ Semiconductor
File Size	571.86 KB
Description	N-Channel MOSFET
Datasheet	FDMS8622_FairchildSemiconductor.pdf

FDMS8622 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. POE Protection Switch DC-DC Switch Top Bottom Pin 1 SS D S S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drai

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A.
Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
100% UIL Tested.
Termination is Lead-free and RoHS Compliant General.

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Published: Aug 8, 2013 |