FDMS86255ET150 - MOSFET

Fairchild Semiconductor

FDMS86255ET150 Datasheet Preview — Preview of FDMS86255ET150 PDF

Datasheet Details

Part number	FDMS86255ET150
Manufacturer	Fairchild ↗ Semiconductor
File Size	221.73 KB
Description	MOSFET
Datasheet	FDMS86255ET150-FairchildSemiconductor.pdf

FDMS86255ET150 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. OringFET / Load Switching Synchronous rectification DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSF

Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A.
Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
Next generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: Jan 10, 2017 |