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FDN361BN N-Channel MOSFET

FDN361BN Description

FDN361BN 30V N-Channel, Logic Level, PowerTrench“ MOSFET Fe bruary 2009 FDN361BN 30V N-Channel, Logic Level, PowerTrench“ MOSFET General Descriptio.
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to min.

FDN361BN Features

* x 1.4 A, 30 V. RDS(ON) = 110 m: @ VGS = 10 V RDS(ON) = 160 m: @ VGS = 4.5 V x Low gate charge x Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities x High performance trench technology for extremely low RDS(

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N-Channel MOSFET Fairchild Semiconductor
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