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FDS6673BZ_F085 - P-Channel PowerTrench MOSFET

FDS6673BZ_F085 Description

FDS6673BZ_F085 P-Channel PowerTrench® MOSFET PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET -30V, -14.5A, 7.8mΩ July 2009 General .
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-s.

FDS6673BZ_F085 Features

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A

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P-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS6673BZ_F085-like datasheet

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