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FDS8960C Dual N & P-Channel PowerTrench MOSFET

FDS8960C Description

www.DataSheet4U.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET August 2005 FDS8960C Dual N & P-Channel PowerTrench® MOSFET General .
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process.

FDS8960C Features

* Q1: N-Channel RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V
* Q2: P-Channel RDS(on) = 0.053Ω @ VGS =
* 10V RDS(on) = 0.087Ω @ VGS =
* 4.5V Fast switching speed RoHS compliant 7.0A, 35V
* 5A,
* 35V D1 D D1 D DD2 D2 D 5 6 7 Q2 4 3 Q1

FDS8960C Applications

* where low in-line power loss and fast switching are required.

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Datasheet Details

Part number
FDS8960C
Manufacturer
Fairchild Semiconductor
File Size
201.21 KB
Datasheet
FDS8960C_FairchildSemiconductor.pdf
Description
Dual N & P-Channel PowerTrench MOSFET

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Dual P-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS8960C-like datasheet