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FDS8962C Dual N & P-Channel PowerTrench MOSFET

FDS8962C Description

www.DataSheet4U.com FDS8962C Dual N & P-Channel PowerTrench® MOSFET June 2006 FDS8962C Dual N & P-Channel PowerTrench® MOSFET .
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process t.

FDS8962C Features

* Q1: N-Channel 7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V
* Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V
* Fast switching speed
* High power and handling capability in a widely used surface mount package General Desc

FDS8962C Applications

* where low in-line power loss and fast switching are required. D1 D1 D2 D2 5 6 Q2 4 3 SO-8 Pin 1 S1 G1 G2 S2 7 8 Q1 2 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous

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Datasheet Details

Part number
FDS8962C
Manufacturer
Fairchild Semiconductor
File Size
700.88 KB
Datasheet
FDS8962C_FairchildSemiconductor.pdf
Description
Dual N & P-Channel PowerTrench MOSFET

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Dual P-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS8962C-like datasheet