MRF6S19120HR3 RF Power Transistors

Freescale Semiconductor

MRF6S19120HR3 Description

Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev.1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Part Number 2743019447 100B100JP50X 100B5R1CP50X 100B102JP50X C1825C100J5RAC T491X106K035AS GRM55DR61H106KA88L T491C105K022AS MCR63V470M8X11 CRCW12065.

MRF6S19120HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Designed for Lower Memory E

MRF6S19120HR3 Applications

* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www. datasheet4u. com applications.
* Typical Single - Carrier N - CDMA Performance: VDD =

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Datasheet Details

Part number: MRF6S19120HR3
Manufacturer: Freescale Semiconductor
File Size: 483.65 KB
Datasheet: MRF6S19120HR3_FreescaleSemiconductor.pdf
Description: RF Power Transistors

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Power Transistors Freescale Semiconductor

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