MRFE6VP100HR5 RF Power LDMOS Transistors

Freescale Semiconductor

MRFE6VP100HR5 Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs RF powe.
Part Number Manufacturer B1, B2 Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite C1, C8 22 μF, 35 V Tantalum Capacitors T491X226K035AT.

MRFE6VP100HR5 Features

* Wide Operating Frequency Range
* Extremely Rugged
* Unmatched, Capable of Very Broadband Operation
* Integrated Stability Enhancements
* Low Thermal Resistance
* Integrated ESD Protection Circuitry
* In Tape and Reel. R5 Suffix = 50 Units, 56

MRFE6VP100HR5 Applications

* operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD IMD (%) (dB

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MRFE6VP100HR5 Datasheet Preview — Preview of MRFE6VP100HR5 PDF

Datasheet Details

Part number: MRFE6VP100HR5
Manufacturer: Freescale Semiconductor
File Size: 1.18 MB
Datasheet: MRFE6VP100HR5-FreescaleSemiconductor.pdf
Description: RF Power LDMOS Transistors

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Power LDMOS Transistors Freescale Semiconductor

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