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MRFG35002N6AT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35002N6AT1 Description

Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev.1, 12/2008 www.DataSheet4U.com Gallium Arsenide PHEMT RF Power Field Effec.
13 pF Chip Capacitors Part Number ATC100A130JT500XT Manufacturer ATC MRFG35002N6AT1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9.

MRFG35002N6AT1 Features

* Excellent Phase Linearity and Group Delay Characteristics
* High Gain, High Efficiency and High Linearity
* RoHS Compliant
* In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, ST

MRFG35002N6AT1 Applications

* Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158 mWatts Avg. , 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 d

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Datasheet Details

Part number
MRFG35002N6AT1
Manufacturer
Freescale Semiconductor
File Size
214.84 KB
Datasheet
MRFG35002N6AT1_FreescaleSemiconductor.pdf
Description
Gallium Arsenide PHEMT RF Power Field Effect Transistor

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Gallium Arsenide PHEMT Power Field Effect Transistor Freescale Semiconductor
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