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MRFG35010ANT1 RF Power Field Effect Transistor

MRFG35010ANT1 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev.0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect.

MRFG35010ANT1 Features

* .796 0.797 0.796 0.796 0.796 0.796 0.794 S22 ∠φ - 179.31 179.94 179.35 178.72 178.05 177.37 176.66 175.92 175.15 174.36 173.56 172.68 171.84 171.00 170.10 169.21 168.37 167.37 166.48 165.70 164.78 162.67 162.09 161.

MRFG35010ANT1 Applications

* Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg. , 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB

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Power Field Effect Transistor Freescale Semiconductor
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