IXFR80N15Q Datasheet - IXYS Corporation

IXFR80N15Q HiPerFET Power MOSFETs

Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt IXFR 80N15Q VDSS = 150 V = 75 A ID25 RDS(on) = 22.5 mW trr £ 200ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, V.

IXFR80N15Q Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

IXFR80N15Q_IXYSCorporation.pdf