IXFR80N20Q HiPerFET Power MOSFETs

IXYS Corporation

Description

HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Low Qg, H.

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Datasheet Specifications

Part number: IXFR80N20Q
Manufacturer: IXYS Corporation
File Size: 57.29 KB
Datasheet: IXFR80N20Q_IXYSCorporation.pdf
Description: HiPerFET Power MOSFETs

Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC motor control Advantages www. DataSheet4U. net Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2

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IXFR80N20Q HiPerFET Power MOSFETs IXYS Corporation

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