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IXFR80N20Q HiPerFET Power MOSFETs

IXFR80N20Q Description

HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Low Qg, H.

IXFR80N20Q Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

IXFR80N20Q Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC motor control Advantages www. DataSheet4U. net Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2

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Datasheet Details

Part number
IXFR80N20Q
Manufacturer
IXYS Corporation
File Size
57.29 KB
Datasheet
IXFR80N20Q_IXYSCorporation.pdf
Description
HiPerFET Power MOSFETs

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