IXFR80N50P Datasheet - IXYS

IXFR80N50P Power MOSFET

Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR 80N50P VDSS ID25 RDS(on) trr = 500 V = 42 A < 72 mΩ < 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC .

IXFR80N50P Features

* W °C °C °C °C °C N/lb V~ g g z z z International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to

IXFR80N50P_IXYS.pdf