IXBF55N300 Datasheet - IXYS

IXBF55N300 Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat)  3000V 34A 3.2V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C 86 A IC110 TC = 110°C 34 A ICM TC = 25°C, 1ms 600 A SSOA VGE = 15V, TVJ = 125°C, RG = 2 ICM = 110 A (RBSOA) Clamped Inductive Load 1500 V TS.

IXBF55N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

IXBF55N300-IXYS.pdf

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Datasheet Details

Part number:

IXBF55N300

Manufacturer:

IXYS

File Size:

1.54 MB

Description:

Monolithic bipolar mos transistor.

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IXBF55N300 IXBF55N300 Monolithic Bipolar MOS Transistor IXYS

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