IXBF55N300 Monolithic Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat)  3000V 34A 3.2V (Electrically Isolated Ta.

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Datasheet Specifications

Part number: IXBF55N300
Manufacturer: IXYS
File Size: 1.54 MB
Datasheet: IXBF55N300-IXYS.pdf
Description: Monolithic Bipolar MOS Transistor

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100205C(7/21) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values M

IXBF55N300 Distributors

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IXBF55N300 Monolithic Bipolar MOS Transistor IXYS

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