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IXTQ180N10T, IXTH180N10T Power MOSFET

IXTQ180N10T Description

Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).

IXTQ180N10T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 2

IXTQ180N10T Applications

* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier © 2006 IXYS CORPORATION All

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This datasheet PDF includes multiple part numbers: IXTQ180N10T, IXTH180N10T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTQ180N10T, IXTH180N10T
Manufacturer
IXYS Corporation
File Size
195.75 KB
Datasheet
IXTH180N10T-IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTQ180N10T, IXTH180N10T.
Please refer to the document for exact specifications by model.

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Power MOSFET IXYS Corporation
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