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IXTQ182N055T, IXTH182N055T Power MOSFET

IXTQ182N055T Description

Preliminary Technical Information TrenchMVTM Power MOSFET IXTH182N055T IXTQ182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTQ182N055T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V,

IXTQ182N055T Applications

* Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99682 (11/06) Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs VDS=

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This datasheet PDF includes multiple part numbers: IXTQ182N055T, IXTH182N055T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTQ182N055T, IXTH182N055T
Manufacturer
IXYS Corporation
File Size
202.08 KB
Datasheet
IXTH182N055T-IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTQ182N055T, IXTH182N055T.
Please refer to the document for exact specifications by model.

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Power MOSFET IXYS Corporation
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