FDN358P P-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * Single, P-Channel, POWERTRENCH), Logic Level VDSS *30 V RDS(ON) MAX 125 mW @ *10 V 200 m.
This P. Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on.

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Datasheet Specifications

Part number: FDN358P
Manufacturer: ON Semiconductor ↗
File Size: 291.31 KB
Datasheet: FDN358P-ONSemiconductor.pdf
Description: P-Channel MOSFET

Features

* 1.5 A,
* 30 V
* RDS(ON) = 125 mW @ VGS =
* 10 V
* RDS(ON) = 200 mW @ VGS =
* 4.5 V
* Low Gate Charge (4 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power Version of Industry Standard

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FDN358P P-Channel MOSFET ON Semiconductor

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