FDN358P - P-Channel MOSFET

ON Semiconductor

FDN358P Datasheet Preview — Preview of FDN358P PDF

Datasheet Details

Part number	FDN358P
Manufacturer	ON Semiconductor ↗
File Size	291.31 KB
Description	P-Channel MOSFET
Datasheet	FDN358P-ONSemiconductor.pdf

FDN358P Product details

Description

This P Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

1.5 A,.
30 V.
RDS(ON) = 125 mW @ VGS =.
10 V.
RDS(ON) = 200 mW @ VGS =.
4.5 V.
Low Gate Charge (4 nC Typical).
High Performance Trench Technology for Extremely Low RDS(ON).
High Power Version of Industry Standard SOT.
23 Package. Identical Pin.
Out to SOT.
23 with 30% Higher Power Handling Capability.
This Device is Pb.
Free and Halide Free.

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Published: Dec 25, 2023 |