FDN359AN - N-Channel MOSFET

ON Semiconductor

FDN359AN Datasheet Preview — Preview of FDN359AN PDF

Datasheet Details

Part number	FDN359AN
Manufacturer	ON Semiconductor ↗
File Size	283.14 KB
Description	N-Channel MOSFET
Datasheet	FDN359AN-ONSemiconductor.pdf

FDN359AN Product details

Description

This N Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain superior switching performance. line power loss and fast switching are required.

Features

2.7 A, 30 V.
RDS(ON) = 0.046 W @ VGS = 10 V.
RDS(ON) = 0.060 W @ VGS = 4.5 V.
Very Fast Switching.
Low Gate Charge (5 nC Typical).
High Power Version of Industry Standard SOT.
23 Package. Identical Pin out to SOT.
23 with 30% Higher Power Handling Capability.

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Published: Dec 25, 2023 |