FDN359AN

N-Channel MOSFET

ON Semiconductor

FDN359AN Features

* 2.7 A, 30 V

* RDS(ON) = 0.046 W @ VGS = 10 V

* RDS(ON) = 0.060 W @ VGS = 4.5 V

* Very Fast Switching

* Low Gate Charge (5 nC Typical)

* High Power Version of Industry Standard SOT

* 23 Package. Identical Pin out to SOT

* 23 with 30% Highe

FDN359AN General Description

This N

*Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

*state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applicati.

FDN359AN Datasheet (283.14 KB)