FDN359AN
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FDN359AN - N-Channel MOSFET
(Fairchild Semiconductor)
April 1999
FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semi.
FDN359BN - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH), Logic Level
FDN359BN
General Description This N−Channel Logic Level MOSFET is produced using onsemi’s
advanced POW.
FDN359BN - N-Channel Logic Level PowerTrench MOSFET
(Fairchild Semiconductor)
FDN359BN
January 2006
FDN359BN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using F.
FDN352AP - PowerTrench MOSFET
(Fairchild Semiconductor)
FDN352AP Single P-Channel, PowerTrench® MOSFET
August 2005
FDN352AP Single P-Channel, PowerTrench® MOSFET
Features
■ –1.3 A, –30V –1.1 A, –30V RDS(O.
FDN352AP - P-Channel MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP
VDSS −30 V
RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V
ID MAX −1.3 A −1.
FDN357N - N-Channel MOSFET
(Fairchild Semiconductor)
March 1998
FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-3 N-Channel logic level enhancement .
FDN357N - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, Logic Level, Enhancement Mode
FDN357N
General Description SUPERSOTt−3 N−Channel logic level enhancement mode power
field effect .
FDN358P - P-Channel MOSFET
(Fairchild Semiconductor)
March 1998
FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-3 P-Channel logic level enhancement .
FDN358P - P-Channel MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
MOSFET – Single, P-Channel, POWERTRENCH), Logic Level
VDSS −30 V
RDS(ON) MAX 125 mW @ −10 V 200 mW @ −4.5 V
ID MAX −1.5 .
FDN302P - P-Channel MOSFET
(Fairchild Semiconductor)
FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gat.