FDN86265P Datasheet, Mosfet, ON Semiconductor

FDN86265P Features

• Mosfet
• Max rDS(on) = 1.2 W at VGS =
    –10 V, ID =
• 0.8 A Max rDS(on) = 1.4 W at VGS =
    –6 V, ID =
• 0.7 A
• Very Low RDS
• o

PDF File Details

Part number:

FDN86265P

Manufacturer:

ON Semiconductor ↗

File Size:

295.26kb

Download:

📄 Datasheet

Description:

P-channel mosfet. This P

Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been optimized for the on

stat

FDN86265P Application

• Applications as Well as Load Switch Applications
• 100% UIL Tested
• Pb
• Free, Halide Free and RoHS Compliant Applications

TAGS

FDN86265P

ON Semiconductor

📁 Related Datasheet

FDN86265P - MOSFET (Fairchild Semiconductor)
FDN86265P P-Channel PowerTrench® MOSFET May 2014 FDN86265P P-Channel PowerTrench® MOSFET -150 V, -0.8 A, 1.2 Ω Features General Description „ Max .

FDN86246 - MOSFET (Fairchild Semiconductor)
FDN86246 N-Channel PowerTrench® MOSFET December 2010 FDN86246 N-Channel PowerTrench® MOSFET 150 V, 1.6 A, 261 m: Features General Description „ M.

FDN86246 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 150 V, 1.6 A, 261 mW FDN86246 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRE.

FDN8601 - MOSFET (Fairchild Semiconductor)
FDN8601 N-Channel PowerTrench® MOSFET FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m: July 2010 Features General Description „ Max rDS.

FDN8601 - N-Channel MOSFET (TY Semiconductor)
SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: Features „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS .

FDN8601 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 100 V, 2.7 A, 109 mW FDN8601 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTREN.

FDN86501LZ - MOSFET (Fairchild Semiconductor)
FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ Fe.

FDN86501LZ - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 60 V, 2.6 A, 116 mW FDN86501LZ General Description This N−Channel MOSFET is produced using onsemi’s ad.

FDN028N20 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 20 V, 6.1 A, 28 mW FDN028N20 General Description This N−Channel POWERTRENCH MOSFET is produced using onsemi’s advanc.

FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gat.